中红外超级LED21系列led215led218波长2.13-2.16um2.17-2.19um开关时间30ns使用温度-240度至50度TO-18封装LightEmittingDiodeswithcentralwavelengthMIDIRLED-PR2,15mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.