中红外超级LED系列波长1.92-1.97um开关时间30ns使用温度-240度至50度TO-18封装LightEmittingDiodeswithcentralwavelengthMIDIRLED-PR1,95mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelengthMIDIRLED-PR1,95mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelengthMIDIRLED-PR1,95mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelengthMIDIRLED-PR1,95mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelengthMIDIRLED-PR1,95mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelengthMIDIRLED-PR1,95mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelengthMIDIRLED-PR1,95mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.