中红外超级LED41系列波长3.95-4.10um开关时间30ns使用温度-240度至50度TO-18封装LightEmittingDiodeswithcentralwavelength4,1mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength4,1mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength4,1mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength4,1mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength4,1mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength4,1mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength4,1mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.