中红外超级LED29系列波长2.84-2.90um开关时间30ns使用温度-240度至50度TO-18封装LightEmittingDiodeswithcentralwavelengthMIDIRLED-PR2,84mmseriesarebasedonheterostructuresgrownonInAssubstrates.InAsSbPisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinementLightEmittingDiodeswithcentralwavelengthMIDIRLED-PR2,84mmseriesarebasedonheterostructuresgrownonInAssubstrates.InAsSbPisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinementLightEmittingDiodeswithcentralwavelengthMIDIRLED-PR2,84mmseriesarebasedonheterostructuresgrownonInAssubstrates.InAsSbPisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinementLightEmittingDiodeswithcentralwavelengthMIDIRLED-PR2,84mmseriesarebasedonheterostructuresgrownonInAssubstrates.InAsSbPisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinementLightEmittingDiodeswithcentralwavelengthMIDIRLED-PR2,84mmseriesarebasedonheterostructuresgrownonInAssubstrates.InAsSbPisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinementLightEmittingDiodeswithcentralwavelengthMIDIRLED-PR2,84mmseriesarebasedonheterostructuresgrownonInAssubstrates.InAsSbPisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinementLightEmittingDiodeswithcentralwavelengthMIDIRLED-PR2,84mmseriesarebasedonheterostructuresgrownonInAssubstrates.InAsSbPisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinementLightEmittingDiodeswithcentralwavelengthMIDIRLED-PR2,84mmseriesarebasedonheterostructuresgrownonInAssubstrates.InAsSbPisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement