PartNumber(编码)Chip(晶片)1W白色 Material(材料)Emitting(颜色)入P(nm)InGaNWHITE正白 Parameter(参数)SymbolMINTYPMAXUNITTESTCONDITIONForwardVoltage(顺向电压)VF3.0/3.6VIf=350mADomiWavelength(主波长) d0.28/0.32nm ReverseCurrent(反向电流)IR 10 AVR=5VPowerdissipation(消耗功率)Pd 1000 mW LuminousIntensity(发光强度)IV80/90LMIf=350mAPeakForwardCurrent(顺向电流峰值)If(Peak) 500mA RecommendForwardCurrent(顺向电流)If(Rec) 350 mA Electrostatic Discharge(静电释放)ESD 2000 V 1.BSOLUTE MAXIMUM RATINGS:(Ta=25℃)2.OPERATINGTEMPERATURE: 40℃TO80℃(操作温度)3.LEADSOLDERING:260℃FOR5SECONDS(焊接条件)4.储存条件:25℃以下60%湿度以下.