PartNumber(编码)Chip(晶片) Material(材料)Emitting(颜色)入P(nm)GaN/GaN 600-610 Parameter(参数)SymbolMINTYPMAXUNITTESTCONDITIONForwardVoltage(顺向电压)VF2.0/2.2VIf=20mADomiWavelength(主波长) d600 610nm ReverseCurrent(反向电流)IR 10 AVR=5VPowerdissipation(消耗功率)Pd 170 mW LuminousIntensity(发光强度)IV1000/1500mcdIf=20mAPeakForwardCurrent(顺向电流峰值)If(Peak) 100mA RecommendForwardCurrent(顺向电流)If(Rec) 20 mA Electrostatic Discharge(静电释放)ESD 2000 V 1.BSOLUTE MAXIMUM RATINGS:(Ta=25℃)2.OPERATINGTEMPERATURE: 40℃TO80℃(操作温度)3.LEADSOLDERING:260℃FOR5SECONDS(焊接条件) 4.储存条件:25℃以下60%湿度以下.