Polycrystalsiliconwafer1)Type:Ptype-Borondoped-2)Resistivity0,5-3,3-6Ohm*cm3)OxygenContent /=8,0x1017atoms/cm34)CarbonContent /=1,0x1018atoms/cm35)Lifetime /=2 S 6)Size156x156+/-0.5mm7)Anglebetweensidesnotspecified8)CentreThicknessnotspecified9)TTV 30um10)Sawmark: 15um11)Bow: 50um12)Surfacequality:ascut,cleaned,nostain,nowatermark,nopitsonthesurface