编号NO. 项目规格单位UNITS ITEMSSPECIFICATIONS1拉制方式CZ GrowingMethod1拉制方式CZ GrowingMethod2材料单晶硅 MaterialMonocrystallineSilicon3导电类型 掺杂剂P/BorP/Ga mmType Dopant4硅片尺寸125*125 0.5 见附图1 SeeFigure1mmWaferSize5直径150 0.5mmDiameter6垂直度90 0.3 Perpendicularity7厚度200 20 mThickness8总厚度变化 30 mTTV9电阻率A:0.5 3 B:3 6 cmResistivity10少子寿命 10 sMinorityCarrierLife11晶向＜100＞ 2.0 　Orientation12位错密度 3000pcs/cm2DislocationDensity13氧含量 1*1018(ASTMF121-83)atoms/cm3OxygenContent14碳含量 5*1016(ASTMF123-83)atoms/cm3CarbonContent15崩边深度Depth 0.3mm,长度Length 0.5mm EdgeDefect(最多2处)(Max2pieces)16沾污无 ContaminationAreaNone17线痕 20 mSawMark18翘曲度 50 mWarpage 硅片型号WaferType尺寸(mm)DimensionAB C DMaxMinMaxMinMaxMinMaxMin125I125.5124.5150.5149.584823129 125II125.5124.5165.5164.51091071311